Strain in cubic GaN films versus residual hexagonal GaN content

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Elsevier

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DLTS analysis of high resistive edge termination technique‐induced defects in GaN‐based Schottky barrier diodes

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PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 213, Iss. 9, 2016-09 ,pp. : 2364-2370

John Wiley & Sons Inc

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New approaches for growth control of GaN-based HEMT structures

By Hardtdegen H.   Steins R.   Kaluza N.   Cho Y.S.   Wirtz K.   von der Ahe M.   Bay H.L.   Heidelberger G.   Marso M.  

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Springer Publishing Company

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Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate

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Demonstration of GaN‐based near UV Laser Diodes

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