Epitaxial growth of heavily B-doped SiGe films and interfacial reaction of Ti/B-doped SiGe bilayer structure using rapid thermal processing

Author: Okada M.   Kamioka H.   Matsuo H.   Fukuda Y.   Zaima S.   Kawamura K.   Yasuda Y.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 130-133

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract