Energy band offsets of SiGeC heterojunctions

By Kolodzey J.   Chen F.   Orner B.A.   Guerin D.   Shah S.I.  

Thin Solid Films, Vol. 302, Iss. 1, 1997-06 ,pp. : 201-203

Elsevier

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SiGe(C) epitaxial technologies-issues and prospectives

By Grasby T.J.   Whall T.E.   Parker E.H.C.  

Thin Solid Films, Vol. 412, Iss. 1, 2002-06 ,pp. : 44-49

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Comparison of SiGe and SiGe:C heterojunction bipolar transistors

By Knoll D.   Heinemann B.   Ehwald K.-E.   Tillack B.   Schley P.   Osten H.J.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 342-346

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Carbon dependence of the dielectric response function in epitaxial SiGeC layers grown on Si

By Bonan J.   Meyer F.   Finkman E.   Warren P.   Boher P.  

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Strain compensation in Si 1-x-y Ge x C y layers prepared by ion implantation and excimer laser annealing

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Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 145-148

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