Recent advances with SiGe heterojunction bipolar transistors

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Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 246-249

Elsevier

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Integration of SiGe heterojunction bipolar transistors in a 200 mm industrial BiCMOS technology

By De Berranger E.   Bodnar S.   Chantre A.   Regolini J.L.   Mouis M.   Kirtsch J.   Monroy A.   Granier A.   Laurens M.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 250-253

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Characterization of SiGe base layer in Si/SiGe heterojunction bipolar transistor layer structure

By Zhang J.   Jin X.   Tsien P.-H.   Lo T.-C.  

Thin Solid Films, Vol. 333, Iss. 1, 1998-11 ,pp. : 13-15

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Characterization of Si/SiGe heterojunction bipolar transistors by deep level transient spectroscopy

By De Barros O.   Souifi A.   Le Tron B.   Vincent G.   Bremond G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 271-273

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Energy band offsets of SiGeC heterojunctions

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