Growth of Ge on H-terminated Si(111) surface

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Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 34-37

Elsevier

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The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface

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Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 183-187

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Theoretical study of penetration reaction of fluorine atoms and ions into hydrogen-terminated Si(111) thin film

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Thin Solid Films, Vol. 374, Iss. 2, 2000-10 ,pp. : 143-149

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Metal-organic chemical vapor deposition growth of GaN thin film on 3C-SiC/Si(111) substrate using various buffer layers

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Thin Solid Films, Vol. 401, Iss. 1, 2001-12 ,pp. : 60-66

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Thin SiGe buffer layer growth by in situ low energy hydrogen plasma preparation

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Thin Solid Films, Vol. 389, Iss. 1, 2001-06 ,pp. : 146-152

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