Infrared spectroscopy of strained Si 1-y C y alloys (0 =< y =< 0.015) grown on silicon

By Pressel K.   Fischer G.G.   Zaumseil P.   Kim M.   Osten H.J.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 133-136

Elsevier

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Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE

By Joelsson K.B.   Ni W.-X.   Pozina G.   Hultman L.   Hansson G.V.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 185-188

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Molecular beam epitaxial growth and photoluminescence investigation of Si 1-y C y layers

By Zerlauth S.   Penn C.   Seyringer H.   Stangl J.   Brunthaler G.   Bauer G.   Schaffler F.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 33-40

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Comparison of Si/Si 1-x-y Ge x C y and Si/Si 1-y C y heterojunctions grown by rapid thermal chemical vapor deposition

By Hoyt J.L.   Mitchell T.O.   Rim K.   Singh D.V.   Gibbons J.F.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 41-46

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Doping and electrical characteristics of in-situ heavily B-doped Si 1-x-y Ge x C y films epitaxially grown using ultraclean LPCVD

By Noda T.   Lee D.   Shim H.   Sakuraba M.   Matsuura T.   Murota J.  

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 57-60

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