Growth of Si 1-y C y /Si- and Si 1-x-y Ge x C y /Si-multiple quantum wells using molecular beam epitaxy

By Hartmann R.   Grutzmacher D.   Muller E.   Gennser U.   Dommann A.   Schroter P.   Warren P.  

Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. : 158-162

Elsevier

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Growth of Si 1-x-y Ge x C y multi-quantum wells: Structural and optical properties

By Boucaud P.   Guedj C.   Julien F.H.   Finkman E.   Bodnar S.   Regolini J.L.  

Thin Solid Films, Vol. 278, Iss. 1, 1996-05 ,pp. : 114-117

Elsevier

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Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE

By Joelsson K.B.   Ni W.-X.   Pozina G.   Hultman L.   Hansson G.V.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 185-188

Elsevier

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Optimization of growth conditions for strained Si/Si 1-y C y structures

By Joelsson K.B.   Ni W.-X.   Pozina G.   Hultman L.   Hansson G.V.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 15-20

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Infrared spectroscopy of strained Si 1-y C y alloys (0 =< y =< 0.015) grown on silicon

By Pressel K.   Fischer G.G.   Zaumseil P.   Kim M.   Osten H.J.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 133-136

Elsevier

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