Residual strain and surface roughness of Si 1-x Ge x alloy layers grown by molecular beam epitaxy on Si(001) substrate

By Tatsuyama C.   Asano T.   Nakao T.   Matada H.   Tambo T.   Ueba H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 161-166

Elsevier

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Growth of strained Si/Si 1-y C y /Si 1-x Ge x structures by MBE

By Joelsson K.B.   Ni W.-X.   Pozina G.   Hultman L.   Hansson G.V.  

Vacuum, Vol. 49, Iss. 3, 1998-03 ,pp. : 185-188

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Effect of strain on light emission from pseudomorphic Si/Si 1-x Ge x /Si structures

By Kimura Y.   Nakagawa K.   Miyao M.  

Thin Solid Films, Vol. 306, Iss. 1, 1997-08 ,pp. : 130-132

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Band ordering of the pseudomorphic Si 1-x Ge x /Si heterostructure: the fundamental role of excitons

By Penn C.   Bauer G.   Schaffler F.   Glutsch S.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 394-397

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Si 1-x Ge x /Si valence band offset determination using current-voltage characteristics

By Chretien O.   Apetz R.   Vescan L.   Souifi A.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 198-200

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