Surface roughness of strain-relaxed Si 1-x Ge x layers grown by two-step growth method

By Iwano H.   Yoshikawa K.   Zaima S.   Yasuda Y.  

Thin Solid Films, Vol. 317, Iss. 1, 1998-04 ,pp. : 17-20

Elsevier

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Intense visible photoluminescence from molecular beam epitaxy porous Si 1-x Ge x grown on Si

By Unal B.   Bayliss S.C.   Phillips P.   Parker E.H.C.  

Thin Solid Films, Vol. 305, Iss. 1, 1997-08 ,pp. : 274-279

Elsevier

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Structural characterization of SiGe step graded buffer layers grown on prestructured Si[001] substrates by molecular beam epitaxy

By Muller E.   Hartmann R.   David C.   Grutzmacher D.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 92-95

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Influence of misfit strain on {311} facet development in selective epitaxial growth of Si 1-x Ge x /Si(100) grown by gas-source molecular beam epitaxy

By D. U'Ren G.   Goorsky M.S.   Wang K.L.  

Thin Solid Films, Vol. 365, Iss. 1, 2000-04 ,pp. : 147-150

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Molecular beam epitaxy growth and thermal stability of Si 1-x Ge x layers on extremely thin silicon-on-insulator substrates

By Brunner K.   Dobler H.   Abstreiter G.   Schafer H.   Lustig B.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 245-250

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