Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer

Author: Takamiya H.   Miura M.   Usami N.   Hattori T.   Shiraki Y.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.369, Iss.1, 2000-07, pp. : 84-87

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Abstract