Application of synchrotron radiation to TXRF analysis of metal contamination on silicon wafer surfaces

Author： Pianetta P.   Baur K.   Singh A.   Brennan S.   Kerner J.   Werho D.   Wang J.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.373, Iss.1, 2000-09, pp. : 222-226

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A comparative analysis of different measurement techniques to monitor metal and organic contamination in silicon device processing

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 3, 2015-03 ,pp. : 495-505

John Wiley & Sons Inc

Access to resources Recommend Favorite

In situ analysis using synchrotron radiation photoemission spectroscopy for initial oxidation of oxygen preadsorbed Si(001) surfaces induced by supersonic O2 molecular beams

By  

SURFACE AND INTERFACE ANALYSIS, Vol. 47, Iss. 4, 2015-04 ,pp. : 554-554

John Wiley & Sons Inc

Access to resources Recommend Favorite

Process characterization and statistical analysis of oxide CMP on a silicon wafer with sparse data

By Bukkapatnam S.T.S.   Rao P.K.   Lih W.-C.   Chandrasekaran N.   Komanduri R.  

Applied Physics A, Vol. 88, Iss. 4, 2007-09 ,pp. : 785-792

Springer Publishing Company

Access to resources Recommend Favorite

Characterization of silicon wafer bonding by observation in transmitted infrared radiation from an extended source

By Piotrowski T.   Jung W.  

Thin Solid Films, Vol. 364, Iss. 1, 2000-03 ,pp. : 274-279

Elsevier

Access to resources Recommend Favorite

Intrinsic defects and Pt atoms at TiO 2 (110) surfaces: A valence band spectroscopy study using synchrotron radiation

By Schierbaum K.-D.   Fischer S.   Schneider F.  

Vacuum, Vol. 47, Iss. 10, 1996-10 ,pp. : 1149-1152

Elsevier

Access to resources Recommend Favorite