Surface reaction processes in C 4 F 8 and C 5 F 8 plasmas for selective etching of SiO 2 over photo-resist

By Motomura H.   Imai S.-i.   Tachibana K.  

Thin Solid Films, Vol. 390, Iss. 1, 2001-06 ,pp. : 134-138

Elsevier

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Difference between C 4 F 8 and C 5 F 8 plasmas in surface reaction processes for selective etching of SiO 2 over Si 3 N 4

By Motomura H.   Imai S.-i.   Tachibana K.  

Thin Solid Films, Vol. 374, Iss. 2, 2000-10 ,pp. : 243-248

Elsevier

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Correlation between CF 2 and C x F y densities in C 4 F 8 plasmas

By Sasaki K.   Takizawa K.   Takada N.   Kadota K.  

Thin Solid Films, Vol. 374, Iss. 2, 2000-10 ,pp. : 249-255

Elsevier

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C x F y polymer film deposition in DC and RF fluorinert vapor plasmas

By Lungu C.P.   Lungu A.M.   Sakai Y.   Sugawara H.   Tabata M.   Akazawa M.   Miyamoto M.  

Vacuum, Vol. 59, Iss. 1, 2000-10 ,pp. : 210-219

Elsevier

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Behaviors of electron and negative-ion densities in low-pressure high-density inductively coupled plasmas of SF 6 , NF 3 , CF 4 , and C 4 F 8 gases diluted with Ar

By Kono A.   Konishi M.   Kato K.  

Thin Solid Films, Vol. 407, Iss. 1, 2002-03 ,pp. : 198-203

Elsevier

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