A possible method for large area deposition of a-Si:H thin films using electron cyclotron resonance plasma-enhanced chemical vapor deposition

By Lee J.-H.   Park S.-K.   Shim C.-M.   Park S.   Jung D.-G.  

Thin Solid Films, Vol. 295, Iss. 1, 1997-02 ,pp. : 67-72

Elsevier

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Effects of deposition parameters on composition, structure, resistivity and step coverage of TiN thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

By Kim J.-S.   Lee E.-J.   Baek J.-T.   Lee W.-J.  

Thin Solid Films, Vol. 305, Iss. 1, 1997-08 ,pp. : 103-109

Elsevier

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Dependence of the properties of (Sr x Ti 1-x )O 3 thin films deposited by plasma-enhanced metal-organic chemical vapor deposition on electron cyclotron resonance plasma

By Lee J.S.   Song H.W.   Jun B.-H.   Kwack D.H.   Yu B.G.   Jiang Z.-T.   No K.  

Thin Solid Films, Vol. 301, Iss. 1, 1997-06 ,pp. : 154-161

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Preparation of ZnF 2 and ZnF 2 -BaF 2 thin films by electron cyclotron resonance plasma-enhanced chemical vapor deposition

By Shojiya M.   Kawamoto Y.   Konishi A.   Wakabayashi H.  

Thin Solid Films, Vol. 358, Iss. 1, 2000-01 ,pp. : 99-103

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Electrical properties of silicon nitride films grown on a SiGe layer by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition

By Dufour-Gergam E.   Meyer F.   Delmotte F.   Hugon M.C.   Agius B.   Dutartre D.   Warren P.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 214-216

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