Limited number of carriers transferred to the strained-Si channel in the SiGe/Si/SiGe modulation-doped field-effect transistor

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Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 362-365

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Characterisation of an n-type Si/SiGe modulation doped field-effect transistor

By Kuznetsov V.I.   Werner K.   Radelaar S.   Metselaar J.W.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 263-266

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A low energy ion beam assisted deposition technique for realizing iso-type SiGe/Si hetero-interface diodes

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Terahertz emission of SiGe/Si quantum wells

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Effect of layer thickness variation on light scattering by acoustic phonons in SiGe/Si superlattices

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Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 163-166

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