Comparative study on structure and internal stress in tin-doped indium oxide and indium-zinc oxide films deposited by r.f. magnetron sputtering

By Sasabayashi T.   Ito N.   Nishimura E.   Kon M.   Song P.K.   Utsumi K.   Kaijo A.   Shigesato Y.  

Thin Solid Films, Vol. 445, Iss. 2, 2003-12 ,pp. : 219-223

Elsevier

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Effect of the deposition geometry on the electrical properties within Tin-doped indium oxide film deposited under a given RF magnetron sputtering condition

By You D.J.   Choi S.K.   Han H.S.   Lee J.S.   Lim C.B.  

Thin Solid Films, Vol. 401, Iss. 1, 2001-12 ,pp. : 229-234

Elsevier

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Effects of oxygen partial pressure on the microstructure and electrical properties of indium tin oxide film prepared by d.c. magnetron sputtering

By Choi C.G.   No K.   Lee W.-J.   Kim H.-G.   Jung S.O.   Lee W.J.   Kim W.S.   Yoon C.   Kim S.J.  

Thin Solid Films, Vol. 258, Iss. 1, 1995-03 ,pp. : 274-278

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Low resistivity indium tin oxide films deposited by unbalanced DC magnetron sputtering

By Shin S.H.   Shin J.H.   Park K.J.   Ishida T.   Tabata O.   Kim H.H.  

Thin Solid Films, Vol. 341, Iss. 1, 1999-03 ,pp. : 225-229

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Crystallization and decrease in resistivity on heat treatment of amorphous indium tin oxide thin films prepared by d.c. magnetron sputtering

By Morikawa H.   Fujita M.  

Thin Solid Films, Vol. 339, Iss. 1, 1999-02 ,pp. : 309-313

Elsevier

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