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Philosophical Magazine Letters, Vol. 86, Iss. 6, 2006-06 ,pp. : 395-401

Taylor & Francis Ltd

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Characterization of ZnSe films grown on GaAs substrates with In x Ga l-x As and Al x Ga 1-x As buffer layers

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Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE

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X-ray study of relaxation process of strained GaAs layers grown on (100) Ge substrates

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