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Structural characterization of semi-strained layer (GaAs) 1-x (Si 2 ) x /GaAs multilayers grown by magnetron sputtering

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Behaviors of Al x Ga 1-x N (0.5=

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Indium segregation and reevaporation effects on the photoluminescence properties of highly strained In x Ga 1-x As/GaAs quantum wells

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