Author： Uchida Y. Katsumata N. Ishida K.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.427, Iss.1, 2003-03, pp. : 294-297
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Fundamental aspects of low-temperature growth of microcrystalline silicon
By Kondo M. Fujiwara H. Matsuda A.
Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. :
Access to resources
Recommend
Etching action by atomic hydrogen and low temperature silicon epitaxial growth on ECR plasma CVD
By Sasaki K. Tomoda H. Takada T.
Vacuum, Vol. 51, Iss. 4, 1998-12 ,pp. :
Low-temperature epitaxial growth of B doped Si films on Si(100) and Si(111)
By Schwarzkopf J. Selle B. Schmidbauer M. Fuhs W.
Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. :