Raman study of nitrogen-doped ZnSSe/GaAs epilayers

Author： Kontos A.G.   Raptis Y.S.   Straszburg M.   Pohl U.W.   Bimberg D.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.428, Iss.1, 2003-03, pp. : 185-189

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC Substrate

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 283-286

Trans Tech Publications

Access to resources Recommend Favorite

Nitrogen‐doped ZnO obtained by nitrogen plasma treatment

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 4, 2015-04 ,pp. : 846-850

John Wiley & Sons Inc

Access to resources Recommend Favorite

Growth and Temperature-Depending Raman Characterization of Different Nitrogen-Doped 4H-SiC Crystals

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 307-310

Trans Tech Publications

Access to resources Recommend Favorite

Photoluminescence studies of undoped and nitrogen-doped ZnO layers grown by plasma-assisted epitaxy

By Yamauchi S.   Goto Y.   Hariu T.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 1-6

Elsevier

Access to resources Recommend Favorite

Optical and structural comparison between nitrogen-doped and oxygen-rich ZnO thin films

By Gur E.   Tuzemen S.  

Philosophical Magazine, Vol. 89, Iss. 12, 2009-04 ,pp. : 1081-1089

Taylor & Francis Ltd

Access to resources Recommend Favorite