Stress in hydrogenated amorphous silicon determined by X-ray diffraction

Author： Harting M.   Woodford S.   Knoesen D.   Bucher R.   Britton D.T.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.430, Iss.1, 2003-04, pp. : 153-156

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Simulation and analysis of X-ray photoemission and Auger valence band spectra of hydrogenated amorphous silicon

By Clare B.W.   Jennings P.J.   Lund C.P.   Cornish J.C.L.   Hefter G.T.  

Thin Solid Films, Vol. 326, Iss. 1, 1998-08 ,pp. : 160-165

Elsevier

Access to resources Recommend Favorite

Substrate influence on the X-ray diffraction patterns of amorphous chalcogenide thin films deposited on silicon wafers

By Lorinczi A.  

Thin Solid Films, Vol. 408, Iss. 1, 2002-04 ,pp. : 282-285

Elsevier

Access to resources Recommend Favorite

X-ray diffraction investigation of porous silicon superlattices

By Buttard D.   Bellet D.   Baumbach T.  

Thin Solid Films, Vol. 276, Iss. 1, 1996-04 ,pp. : 69-72

Elsevier

Access to resources Recommend Favorite

X-ray diffraction studies of porous silicon

By Bellet D.   Dolino G.  

Thin Solid Films, Vol. 276, Iss. 1, 1996-04 ,pp. : 1-6

Elsevier

Access to resources Recommend Favorite

Innovative Residual Stress Measurements by X-Ray Diffraction

By  

Materials Science Forum, Vol. 2015, Iss. 812, 2015-03 ,pp. : 303-308

Trans Tech Publications

Access to resources Recommend Favorite