Electrical transport properties of microcrystalline silicon thin films prepared by Cat-CVD

By Liu F.   Zhu M.   Feng Y.   Han Y.   Liu J.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 97-100

Elsevier

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Highly conducting doped microcrystalline silicon ( c-Si:H) at very low substrate temperature by Cat-CVD

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Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 202-205

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Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD

By Fonrodona M.   Gordijn A.   van Veen M.K.   van der Werf C.H.M.   Bertomeu J.   Andreu J.   Schropp R.E.I.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 145-148

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Coverage properties of silicon nitride film prepared by the Cat-CVD method

By Osono S.   Uchiyama Y.   Kitazoe M.   Saito K.   Hayama M.   Masuda A.   Izumi A.   Matsumura H.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 165-169

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Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

By Voz C.   Martin I.   Orpella A.   Puigdollers J.   Vetter M.   Alcubilla R.   Soler D.   Fonrodona M.   Bertomeu J.   Andreu J.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 270-273

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