Switching and filament formation in hot-wire CVD p-type a-Si:H devices

By Hu J.   Branz H.M.   Crandall R.S.   Ward S.   Wang Q.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 249-252

Elsevier

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Hydrogen distribution, nanostructures and optical properties of high deposition rate hot-wire CVD a-Si:H

By Baugh J.   Wang K.   Han D.   Wu Y.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 95-99

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Neutral dangling bonds may not be the dominant recombination centers for photoconductivity in hot-wire a-Si:H

By Han D.   Yue G.   Wang Q.   Shimizu T.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 141-144

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Effect of r.f.-plasma assistance in hot-wire CVD on properties of c-Si:H

By Itoh T.   Inouchi H.   Ohkado K.   Chikusa K.   Nakamura N.   Kondo H.   Yoshida N.   Nonomura S.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 217-220

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Growth of device quality p-type c-Si:H films by hot-wire CVD for a-Si pin and c-Si heterojunction solar cells

By Mukherjee C.   Weber U.   Seitz H.   Schroder B.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 310-314

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