Author： Cho I.H. Sung N.K. Shim H.S. Ryu H.-H. Ha J.H. Lee W.G.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.434, Iss.1, 2003-06, pp. : 69-74
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Self-ordering of CoSi 2 precipitates and epitaxial layer growth of CoSi 2 on Si(100)
By Mantl S. Hacke M. Bay H.L. Kappius L. Mesters S.
Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. :
Access to resources
Recommend
CoSi 2 and TiSi 2 for Si/SiGe heterodevices
By Gluck M. Schuppen A. Rosler M. Heinrich W. Hersener J. Konig U. Yam O. Eizenberg M. Cytermann C.
Thin Solid Films, Vol. 270, Iss. 1, 1995-12 ,pp. :
Growth of epitaxial CoSi 2 for contacts of ultra-thin SOI MOSFETs
By Sakamoto K. Maeda T. Hasegawa M.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :