Author: Changgeng L. Yongqiang W. Shengsheng Y. Hui J. Zhihao Z.
Publisher: Elsevier
ISSN: 0042-207X
Source: Vacuum, Vol.46, Iss.3, 1995-03, pp. : 295-297
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Study of hydrogen in hydrogenated Pd/semiconductor device by ERDA
By Srivastava P.C. Singh U.P. Pandey S.P. Avasthi D.K.
Vacuum, Vol. 47, Iss. 12, 1996-12 ,pp. :
Study of hydrogen in DLC film by ERDA with i 58 Ni ions
By Barshilia H.C. Vankar V.D. Mehta B.R. Sah S. Kabiraj D. Mehta G.K. Avasthi D.K.
Vacuum, Vol. 46, Iss. 7, 1995-07 ,pp. :
Depth profile analysis of porous Si film by ERDA using a E-E detector telescope
By Avasthi D.K. Subramaniyam E.T. Hui S.K. Mehta B.R.
Vacuum, Vol. 47, Iss. 9, 1996-09 ,pp. :
By Galdikas A.
Vacuum, Vol. 55, Iss. 1, 1999-10 ,pp. :