The effects of oxygen exposure on the electrical conductance characteristics of high frequency oxygen plasma anodized Al films

By Da-Ming S.   Zhao-Qi S.   Ai-Xia L.   Zhi-Yuan X.  

Vacuum, Vol. 48, Iss. 11, 1997-11 ,pp. : 953-956

Elsevier

Access to resources Recommend Favorite

Effects of oxygen partial pressure on the microstructure and electrical properties of indium tin oxide film prepared by d.c. magnetron sputtering

By Choi C.G.   No K.   Lee W.-J.   Kim H.-G.   Jung S.O.   Lee W.J.   Kim W.S.   Yoon C.   Kim S.J.  

Thin Solid Films, Vol. 258, Iss. 1, 1995-03 ,pp. : 274-278

Elsevier

Access to resources Recommend Favorite

Annealing effects of anodized Al-based alloy for thin-film transistors

By Arai T.   Iiyori H.  

Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. : 257-261

Elsevier

Access to resources Recommend Favorite

Direct evidence of the formation of Al Au nanocrystals at the alloy-film interface of anodized Al2-Au alloys

By Habazaki H.   Konno T . J.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 77, Iss. 1, 1998-01 ,pp. : 267-272

Taylor & Francis Ltd

Access to resources Recommend Favorite

Oxygen Atom Neutral Beam Assisted Deposited Al 2 O 3 and its Application to the Fabrication of Zinc Oxide Thin Film Transistor

By Cho Eou Sik  

Molecular Crystals and Liquid Crystals, Vol. 550, Iss. 1, 2011-11 ,pp. : 119-127

Taylor & Francis Ltd

Access to resources Recommend Favorite