Oxygen Atom Neutral Beam Assisted Deposited Al 2 O 3 and its Application to the Fabrication of Zinc Oxide Thin Film Transistor

Author: Cho Eou Sik  

Publisher: Taylor & Francis Ltd

ISSN: 1542-1406

Source: Molecular Crystals and Liquid Crystals, Vol.550, Iss.1, 2011-11, pp. : 119-127

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