The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface

By Nikiforov A.I.   Markov V.A.   Cherepanov V.A.   Pchelyakov O.P.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 183-187

Elsevier

Access to resources Recommend Favorite

Specular beam intensity and surface morphology of BSCO films grown by MBE

By Tambo T.   Konishi S.   Takeda S.   Yamada N.   Ueba H.   Tatsuyama C.  

Thin Solid Films, Vol. 300, Iss. 1, 1997-05 ,pp. : 223-227

Elsevier

Access to resources Recommend Favorite

Distributed growth model used for the interpretation of RHEED intensity oscillations observed during the growth of Pb on Si(111) substrates

By Daniluk A.   Mazurek P.   Paprocki K.   Mikolajczak P.  

Thin Solid Films, Vol. 306, Iss. 2, 1997-09 ,pp. : 228-230

Elsevier

Access to resources Recommend Favorite

Arsenic pressure dependence of inter-surface diffusion in MBE of GaAs studied by the microprobe-RHEED/SEM MBE system

By Nishinaga T.   Yamashiki A.   Shen X.Q.  

Thin Solid Films, Vol. 306, Iss. 2, 1997-09 ,pp. : 187-191

Elsevier

Access to resources Recommend Favorite

Intensity profiles along the RHEED streaks for various thin film surface morphologies

By Mae K.   Moshchalkov V.V.   Bruynseraede Y.  

Thin Solid Films, Vol. 340, Iss. 1, 1999-02 ,pp. : 145-152

Elsevier

Access to resources Recommend Favorite