Author： Metwally H.S. Ashery A. Terra F.S. El-Shazly A.A.
Publisher： Elsevier
ISSN： 0042-207X
Source： Vacuum, Vol.55, Iss.3, 1999-12, pp. : 201-206
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
By Lough B.C.C. Lee S.P. Dou Z. Lewis R.A. Zhang C.
Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. :
Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Influence of spread in tape properties on I-V characteristics measured on superconducting cables
Physica C, Vol. 401, Iss. 1, 2004-01 ,pp. :