The microscopic model of Fermi level pinning in ionized cluster beam deposited Ag/n-Si Schottky structures

By Korosak D.   Cvikl B.  

Vacuum, Vol. 61, Iss. 2, 2001-05 ,pp. : 349-353

Elsevier

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Comparative study of I-V characteristics of the ICB deposited Ag\n-Si(111) and Ag\p-Si(100) Schottky junctions

By Cvikl B.   Korosak D.   Horvath Z.J.  

Vacuum, Vol. 50, Iss. 3, 1998-07 ,pp. : 385-393

Elsevier

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The role of PI interlayer deposited by ionized cluster beam on the electroluminescence efficiency

By Cho S.J.   Park D.K.   Kwon T.W.   Yoo D.S.   Kim I.G.  

Thin Solid Films, Vol. 417, Iss. 1, 2002-09 ,pp. : 175-179

Elsevier

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Anomalous temperature dependence of series resistance in Ag\Si and Al\Si Schottky junctions

By Horvath Z.J.   Adam M.   Pinter I.   Cvikl B.   Korosak D.   Mrdjen T.   Tuyen V.V.   Makaro Z.   Ducso C.   Barsony I.  

Vacuum, Vol. 50, Iss. 3, 1998-07 ,pp. : 417-419

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Extraction of interface state density of Pt/p-strained-Si Schottky diode

By Chattopadhyay S.   Bera L.K.   Ray S.K.   Bose P.K.   Maiti C.K.  

Thin Solid Films, Vol. 335, Iss. 1, 1998-11 ,pp. : 142-145

Elsevier

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