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Vacuum, Vol. 61, Iss. 2, 2001-05 ,pp. : 355-359

Elsevier

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Comparative study of I-V characteristics of the ICB deposited Ag\n-Si(111) and Ag\p-Si(100) Schottky junctions

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The role of PI interlayer deposited by ionized cluster beam on the electroluminescence efficiency

By Cho S.J.   Park D.K.   Kwon T.W.   Yoo D.S.   Kim I.G.  

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Fermi-level pinning in Schottky diodes on IV-IV semiconductors: Effect of Ge and C incorporation

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Raman characteristics of hard carbon-nitride films deposited by reactive ionized cluster beam techniques

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