Formation of device isolation in GaAs with polyenergetic ion implantation

Author: Komarov F.F.   Kamyshan A.S.   Mironov A.M.   Lagutin A.E.   Martynov I.S.  

Publisher: Elsevier

ISSN: 0042-207X

Source: Vacuum, Vol.63, Iss.4, 2001-08, pp. : 577-579

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Abstract