Author: Martins J. Fernandes M. Vieira M.
Publisher: Elsevier
ISSN: 0042-207X
Source: Vacuum, Vol.64, Iss.3, 2002-01, pp. : 307-313
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Inhomogeneous transport in microcrystalline p-i-n devices
By Fantoni A. Fernandes M. Schwarz R.
Philosophical Magazine B, Vol. 80, Iss. 4, 2000-04 ,pp. :
Characterization of an Mg‐implanted GaN p–i–n diode
PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 12, 2015-12 ,pp. :