Influence of nitrogen concentration on conductivity of N-doped a-SiC:H films deposited by PECVD

Author: Huran J.   Hotovy I.   Kobzev A.P.   Balalykin N.I.  

Publisher: Elsevier

ISSN: 0042-207X

Source: Vacuum, Vol.67, Iss.3, 2002-09, pp. : 567-570

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Abstract