Modification of metal-oxide-semiconductor devices by electron injection in high fields

Author: Bondarenko G.G.   Andreev V.V.   Stolyarov A.A.   Tkachenko A.L.  

Publisher: Elsevier

ISSN: 0042-207X

Source: Vacuum, Vol.67, Iss.3, 2002-09, pp. : 617-621

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Abstract