Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal-oxide-semiconductor devices

Author： Patil S.B.   Kumbhar A.   Waghmare P.   Ramgopal Rao V.   Dusane R.O.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.395, Iss.1, 2001-09, pp. : 270-274

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Coverage properties of silicon nitride film prepared by the Cat-CVD method

By Osono S.   Uchiyama Y.   Kitazoe M.   Saito K.   Hayama M.   Masuda A.   Izumi A.   Matsumura H.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 165-169

Elsevier

Access to resources Recommend Favorite

Charge-trapping defects in Cat-CVD silicon nitride films

By Umeda T.   Mochizuki Y.   Miyoshi Y.   Nashimoto Y.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 266-269

Elsevier

Access to resources Recommend Favorite

Highly conducting doped microcrystalline silicon ( c-Si:H) at very low substrate temperature by Cat-CVD

By Dusane R.O.   Diehl F.   Weber U.   Schroder B.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 202-205

Elsevier

Access to resources Recommend Favorite

Charge Trap Mechanism in Hybrid Nanostructured (YMnO3) Metal-Oxide-Semiconductor (MOS) Devices

By  

Journal of Nano Research, Vol. 2016, Iss. 42, 2016-09 ,pp. : 92-99

Trans Tech Publications

Access to resources Recommend Favorite

Sub‐Micron Anisotropic InP‐based III–V Semiconductor Material Deep Etching for On‐Chip Laser Photonics Devices

By  

ADVANCED ENGINEERING MATERIALS (ELECTRONIC), Vol. 20, Iss. 2, 2018-02 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite