Author： Grogg Daniel
Publisher： Springer Publishing Company
ISSN： 0946-7076
Source： Microsystem Technologies, Vol.14, Iss.7, 2008-07, pp. : 1049-1053
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
A simple and fast process to fabricate micro-electro-mechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented. The proposed process is realized on both 350 nm and 1.5 μm thin silicon-on-insulator (SOI) substrates, evaluating the possibilities for MEMS devices on thin SOI for future co-integration with CMOS circuitry on a single chip. Through the combination of conventional UV-lithography and focused ion beam (FIB) milling the process needs only two lithography steps, achieving ∼100 nm gaps, thus ensuring an effective transduction. Different FIB parameters and etching parameters and their effect on the process are reported.
Related content
Access to resources
Recommend
Integration of micro-electro-mechanical deformable mirrors in doped fiber amplifiers
By Bouyge D. Crunteanu A. Sabourdy D. Blondy P. Couderc V. Lhermite J. Grossard L. Barthélemy A.
Microsystem Technologies, Vol. 13, Iss. 11-12, 2007-07 ,pp. :
By Borrielli A. Bonaldi M. Serra E. Bagolini A. Bellutti P. Cataliotti F. Marin F. Marino F. Pontin A. Prodi G. Pandraud G. Sarro P. Lorito G. Zoumpoulidis T.
Microsystem Technologies, Vol. 20, Iss. 4-5, 2014-04 ,pp. :