A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs

Author: Abdi M.  

Publisher: Springer Publishing Company

ISSN: 1569-8025

Source: Journal of Computational Electronics, Vol.10, Iss.1-2, 2011-06, pp. : 179-185

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Abstract