Author： Borgstrom M. Deppert K. Samuelson L. Seifert W.
Publisher： Elsevier
ISSN： 0022-0248
Source： Journal of Crystal Growth, Vol.260, Iss.1, 2004-01, pp. : 18-22
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
On the morphology of Sb-doped GaAs layers grown by MOVPE
By Yakimova R. Paskova T. Trifonova E.P.
Thin Solid Films, Vol. 265, Iss. 1, 1995-09 ,pp. :
Access to resources
Recommend
HRXRD study of compositional uniformity of MOVPE grown InGaAs
By Xu J. Cheng X.J.
Thin Solid Films, Vol. 319, Iss. 1, 1998-04 ,pp. :
Shape‐Controlled Growth of Carbon Nanostructures: Yield and Mechanism
CHEMISTRY - A EUROPEAN JOURNAL, Vol. 21, Iss. 35, 2015-08 ,pp. :
PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 5, 2015-05 ,pp. :