Period of time: 2004年1期
Publisher: Elsevier
Founded in: 1967
Total resources: 4
ISSN: 0022-0248
Subject: O Mathematical Sciences and Chemical
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Journal of Crystal Growth,volume 260,issue 1
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Photoluminescence studies of undoped and nitrogen-doped ZnO layers grown by plasma-assisted epitaxy
By Yamauchi S., Goto Y., Hariu T. in (2004)
Journal of Crystal Growth,volume 260,issue 1 , Vol. 260, Iss. 1, 2004-01 , pp.Temperature influence on the growth of gallium nitride by HVPE in a mixed H 2 /N 2 carrier gas
By Trassoudaine A., Cadoret R., Gil-Lafon E. in (2004)
Journal of Crystal Growth,volume 260,issue 1 , Vol. 260, Iss. 1, 2004-01 , pp.Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface
By Huang J.S., Chen Z., Luo X.D., Xu Z.Y., Ge W.K. in (2004)
Journal of Crystal Growth,volume 260,issue 1 , Vol. 260, Iss. 1, 2004-01 , pp.Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study
By Borgstrom M., Deppert K., Samuelson L., Seifert W. in (2004)
Journal of Crystal Growth,volume 260,issue 1 , Vol. 260, Iss. 1, 2004-01 , pp.Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD
By Jiang L., Lin T., Wei X., Wang G.H., Zhang G.Z., Zhang H.B., Ma X.Y. in (2004)
Journal of Crystal Growth,volume 260,issue 1 , Vol. 260, Iss. 1, 2004-01 , pp.Three-dimensional oscillatory flow in a thin annular pool of silicon melt
By Li Y.-R., Imaishi N., Azami T., Hibiya T. in (2004)
Journal of Crystal Growth,volume 260,issue 1 , Vol. 260, Iss. 1, 2004-01 , pp.On the chloride vapor-phase epitaxy growth of GaN and its characterization
By Varadarajan E., Puviarasu P., Kumar J., Dhanasekaran R. in (2004)
Journal of Crystal Growth,volume 260,issue 1 , Vol. 260, Iss. 1, 2004-01 , pp.Ga 1-x Mn x Sb grown on GaSb substrate by liquid phase epitaxy
By Chen C., Chen N., Liu L., Li Y., Wu J. in (2004)
Journal of Crystal Growth,volume 260,issue 1 , Vol. 260, Iss. 1, 2004-01 , pp.Resistivity control in unintentionally doped GaN films grown by MOCVD
By Wickenden A.E., Koleske D.D., Henry R.L., Twigg M.E., Fatemi M. in (2004)
Journal of Crystal Growth,volume 260,issue 1 , Vol. 260, Iss. 1, 2004-01 , pp.By Shao M., Wu Z., Gao F., Ye Y., Wei X. in (2004)
Journal of Crystal Growth,volume 260,issue 1 , Vol. 260, Iss. 1, 2004-01 , pp.