Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy

Author： Guo Xiaolu   Wenquan   Huang Jianliang   Zhang Yanhua   Wei Yang   Cui Kai   Cao Yulian   Li Qiong  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.28, Iss.4, 2013-04, pp. : 45004-45008

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Molecular beam epitaxy of interband cascade structures with InAs/GaSb superlattice absorbers for long-wavelength infrared detection

By Ye Hao   Li Lu   Lotfi Hossein   Lei Lin   Yang Rui Q   Keay Joel C   Mishima Tetsuya D   Santos Michael B   Johnson Matthew B  

Semiconductor Science and Technology, Vol. 30, Iss. 10, 2015-10 ,pp. : 105029-105035

IOP Publishing

Access to resources Recommend Favorite

Investigation of a near mid-gap trap energy level in mid-wavelength infrared InAs/GaSb type-II superlattices

By Wróbel Jarosław   Ciura Łukasz   Motyka Marcin   Szmulowicz Frank   Kolek Andrzej   Kowalewski Andrzej   Moszczyński Paweł   Dyksik Mateusz   Madejczyk Paweł   Krishna Sanjay   Rogalski Antoni  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 115004-115013

IOP Publishing

Access to resources Recommend Favorite

Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

By Romero O.S.   Aragon A.A.   Rahimi N.   Shima D.   Addamane S.   Rotter T.J.   Mukherjee S.   Dawson L.R.   Lester L.F.   Balakrishnan G.  

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 926-930

Springer Publishing Company

Access to resources Recommend Favorite

Bandgap tuning of GaAs/GaAsSb core-shell nanowires grown by molecular beam epitaxy

By Liu Yang   Iyer Shanthi   Liu Yang   Liu Yang   Liu Yang   Liu Yang  

Semiconductor Science and Technology, Vol. 30, Iss. 10, 2015-10 ,pp. : 105036-105045

IOP Publishing

Access to resources Recommend Favorite

Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

By Muralidharan R   Ramesh V   Mishra Puspashree   Srinivasan T  

Semiconductor Science and Technology, Vol. 29, Iss. 3, 2014-03 ,pp. : 35002-35008

IOP Publishing

Access to resources Recommend Favorite