Numerical study of metal oxide hetero-junction solar cells with defects and interface states

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.28, Iss.5, 2013-05, pp. : 55004-55013

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A study on the 2D simulation of Pt/InGaN/GaN/metal Schottky junction solar cell

By Mahala Pramila Sanjay Kumar Behura Aniruddha Singh Kushwaha Ray Abhijit Jani Omkar Dhanavantri Chenna

Semiconductor Science and Technology, Vol. 28, Iss. 5, 2013-05 ,pp. : 55012-55017

IOP Publishing

Access to resources Recommend Favorite

Direct-bonded four-junction GaAs solar cells

By Jingman Shen Lijie Sun Kaijian Chen Wei Zhang Xunchun Wang

Journal of Semiconductors, Vol. 36, Iss. 6, 2015-06 ,pp. : 64012-64015

IOP Publishing

Access to resources Recommend Favorite

Four-body recombination in organic bulk heterojunction solar cells: an alternative interpretation

By Szmytkowski Jdrzej

Semiconductor Science and Technology, Vol. 28, Iss. 5, 2013-05 ,pp. : 52002-52006

IOP Publishing

Access to resources Recommend Favorite

High order of nongeminate recombination in organic bulk heterojunction solar cells

By Szmytkowski Jedrzej

Semiconductor Science and Technology, Vol. 29, Iss. 7, 2014-07 ,pp. : 75022-75026

IOP Publishing

Access to resources Recommend Favorite

Interface recombination feature in metal–semiconductor junction at high photo-excitation

By Konin A

Semiconductor Science and Technology, Vol. 29, Iss. 9, 2014-09 ,pp. : 95009-95012

IOP Publishing

Access to resources Recommend Favorite