Ferroelectric Properties of Bi 3.25 Nd 0.75 Ti 3 O 12 Thin Films Prepared by MOD Process

By Kim Kibeom  

Journal of Electroceramics, Vol. 13, Iss. 1-3, 2004-07 ,pp. : 77-81

Springer Publishing Company

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Oriented growth of Bi 3.25 La 0.75 Ti 3 O 12 thin films on RuO 2 /SiO 2 /Si substrates by using the polymeric precursor method: Structural, microstructural and electrical properties

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Influence of vanadium substitution on the conductivity of Bi 3.25 La 0.75 Ti 3 O 12 and Bi 3.25 La 0.75 Ti 2.97 V 0.03 O 12 ceramics

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Phase Formations and Electrical Properties of Various (Bi, La) 4 Ti 3 O 12 Thin Films by Chemical Solution Deposition

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Ferroelectric properties of (Bi 3.15 Nd 0.85 )Ti 3 O 12 with decreasing film thickness

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Journal of Electroceramics, Vol. 16, Iss. 4, 2006-07 ,pp. : 477-481

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