Author： Sengupta D. Jackson S. Curtis A. Fang W. Malin J. Horton T. Hartman Q. Kuo H. Thomas S. Miller J. Hsieh K. Adesida I. Chuang S. Feng M. Stillman G. Chang Y. Wu W. Tucker J. Chen H. Gibson J. Mazumder J. Li L. Liu H.
Publisher： Springer Publishing Company
ISSN： 1543-186X
Source： Journal of Electronic Materials, Vol.26, Iss.12, 1997-12, pp. : 1376-1381
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
By Sengupta D. Jackson S. Curtis A. Fang W. Malin J. Horton T. Kuo H. Moy A. Miller J. Hsieh K. Cheng K. Chen H. Adesida I. Chuang S. Feng M. Stillman G. Wu W. Tucker J. Chang Y. Li L. Liu H.
Journal of Electronic Materials, Vol. 26, Iss. 12, 1997-12 ,pp. :
Access to resources
Recommend
By Savolainen P. Toivonen M. Orsila S. Saarinen M. Melanen P. Vilokkinen V. Dumitrescu M. Panarello T. Pessa M.
Journal of Electronic Materials, Vol. 28, Iss. 8, 1999-08 ,pp. :
InGaN quantum dot photodetectors
By Ji L.W. Su Y.K. Chang S.J. Liu S.H. Wang C.K. Tsai S.T. Fang T.H. Wu L.W. Xue Q.K.
Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. :