Author： Perry William Zheleva T. Bremser M. Davis R. Shan W. Song J.
Publisher： Springer Publishing Company
ISSN： 1543-186X
Source： Journal of Electronic Materials, Vol.26, Iss.3, 1997-03, pp. : 224-231
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Abstract
Biaxial strains resulting from mismatches in thermal expansion coefficients and lattice parameters in 22 GaN films grown on A1N buffer layers previously deposited on vicinal and on-axis 6H-SiC(0001) substrates were measured via changes in the c-axis lattice parameter. A Poisson’s ratio of = 0.18 was calculated. The bound exciton energy (EBX) was a linear function of these strains. The shift in EBX with film stress was 23 meV/GPa. Threading dislocations densities of ~1010/cm2 and ~108/em2 were determined for GaN films grown on vicinal and on-axis SiC, respectively. A 0.9% residual compressive strain at the GaN/AIN interface was observed by high resolution transmission electron microscopy (HRTEM).
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