![](/images/ico/ico_close.png)
![](/images/ico/ico3.png)
Period of time: 2014年3期
Publisher: Springer Publishing Company
Founded in: 1972
Total resources: 54
ISSN: 1543-186X
Subject: TN Radio Electronics, Telecommunications Technology
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Journal of Electronic Materials,volume 26,issue 3
Menu
![](/images/ico/ico5.png)
By Melloch Michael,Adesida Ilesanmi in (1997)
Journal of Electronic Materials,volume 26,issue 3 , Vol. 26, Iss. 3, 1997-03 , pp.![](/images/ico/ico5.png)
By Alok Dev,Makeshwar K.,Baliga B. in (1997)
Journal of Electronic Materials,volume 26,issue 3 , Vol. 26, Iss. 3, 1997-03 , pp.![](/images/ico/ico5.png)
Hopping conduction in heavily doped bulk n-type SiC
By Mitchel W.,Evwaeaye A.,Smith S.,Roth M. in (1997)
Journal of Electronic Materials,volume 26,issue 3 , Vol. 26, Iss. 3, 1997-03 , pp.![](/images/ico/ico5.png)
Improved Ni ohmic contact on n-type 4H-SiC
By Hallin C.,Yakimova R.,Pécz B.,Georgieva A.,Marinova Ts.,Kasamakova L.,Kakanakov R.,Janzén E. in (1997)
Journal of Electronic Materials,volume 26,issue 3 , Vol. 26, Iss. 3, 1997-03 , pp.![](/images/ico/ico5.png)
Doping of 3C-SiC by implantation of nitrogen at high temperatures
By Lossy R.,Reichert W.,Obermeier E.,Skorupa W. in (1997)
Journal of Electronic Materials,volume 26,issue 3 , Vol. 26, Iss. 3, 1997-03 , pp.![](/images/ico/ico5.png)
Hollow-core screw dislocations in 6H-SiC single crystals: A test of Frank’s theory
By Si Weimin,Dudley Michael,Glass Robert,Tsvetkov Valeri,Carter Calvin in (1997)
Journal of Electronic Materials,volume 26,issue 3 , Vol. 26, Iss. 3, 1997-03 , pp.![](/images/ico/ico5.png)
A silicon carbide LOCOS process using enhanced thermal oxidation by argon implantation
By Alok Dev,Baliga B. in (1997)
Journal of Electronic Materials,volume 26,issue 3 , Vol. 26, Iss. 3, 1997-03 , pp.![](/images/ico/ico5.png)
An EPR study of defects induced in 6H-SiC by ion implantation
By Barklie R.,Collins M.,Holm B.,Pacaud Y.,Skorupa W. in (1997)
Journal of Electronic Materials,volume 26,issue 3 , Vol. 26, Iss. 3, 1997-03 , pp.![](/images/ico/ico5.png)
Rapid thermal annealing of ion implanted 6H-SiC by microwave processing
By Gardner Jason,Rao Mulpuri,Tian Y.,Holland O.,Roth E.,Chi P.,Ahmad I. in (1997)
Journal of Electronic Materials,volume 26,issue 3 , Vol. 26, Iss. 3, 1997-03 , pp.![](/images/ico/ico5.png)
Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates
By Si Weimin,Dudley Michael,Kong Hua,Sumakeris Joe,Carter Calvin in (1997)
Journal of Electronic Materials,volume 26,issue 3 , Vol. 26, Iss. 3, 1997-03 , pp.