Defect state assisted tunneling in intermediate temperature molecular beam epitaxy grown GaAs

Author: Youtz A.   Nabet B.   Castro F.  

Publisher: Springer Publishing Company

ISSN: 1543-186X

Source: Journal of Electronic Materials, Vol.26, Iss.4, 1997-04, pp. : 372-375

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content