Electrical Activation Studies of Silicon-Implanted Al x Ga 1−x N with Aluminum Mole Fraction of 11% to 51%

By Moore E.  

Journal of Electronic Materials, Vol. 40, Iss. 1, 2011-01 ,pp. : 11-16

Springer Publishing Company

Access to resources Recommend Favorite

Enhancement in photoluminescence from 1 eV GaInNAs epilayers subject to 7 MeV electron irradiation

By Pavelescu E-M   Kudrawiec R   Bălţăţeanu N   Spânulescu S   Dumitrescu M   Guina M  

Semiconductor Science and Technology, Vol. 28, Iss. 2, 2013-02 ,pp. : 25020-25023

IOP Publishing

Access to resources Recommend Favorite

The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD

By Grudowski P.   Holmes A.   Eiting C.   Dupuis R.  

Journal of Electronic Materials, Vol. 26, Iss. 3, 1997-03 ,pp. : 257-261

Springer Publishing Company

Access to resources Recommend Favorite

Effect of ion damage on the electrical and optical behavior of p-type GaAs and InGap

By Lee K.   Lee J.   Hong J.   Abernathy C.   Pearton S.   Hobson W.  

Journal of Electronic Materials, Vol. 26, Iss. 11, 1997-11 ,pp. : 1279-1282

Springer Publishing Company

Access to resources Recommend Favorite

Reliability studies on integrated GaAs power-sensor structures using pulsed electrical stress

By Sydlo C.   Mutamba K.   Divac Krnic L.   Mottet B.   Hartnagel H.L.  

Microelectronics Reliability, Vol. 43, Iss. 9, 2003-09 ,pp. : 1929-1933

Elsevier

Access to resources Recommend Favorite