Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates

By Tomich D.   Eyink K.   Grazulis L.   Brown G.   Szmulowicz F.   Mahalingam K.   Seaford M.   Kuo C.   Hwang W.   Lin C.  

Journal of Electronic Materials, Vol. 29, Iss. 7, 2000-07 ,pp. : 940-943

Springer Publishing Company

Access to resources Recommend Favorite

Lattice-mismatched InGaAs layers grown by OMVPE on GaAs based compliant substrates

By Vanhollebeke K.   Moerman I.   Daele P.   Demeester P.  

Journal of Electronic Materials, Vol. 29, Iss. 7, 2000-07 ,pp. : 933-939

Springer Publishing Company

Access to resources Recommend Favorite

Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy

By Han M.   Kang T.   Leem J.   Song B.   Hou Y.   Baek W.   Lee M.   Bahng J.   Kim K.   Kim J.   Kim H.   Kim T.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 507-510

Springer Publishing Company

Access to resources Recommend Favorite

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

By Mukhopadhyay Partha   Bag Ankush   Gomes Umesh   Banerjee Utsav   Ghosh Saptarsi   Kabi Sanjib   Chang Edward   Dabiran Amir   Chow Peter   Biswas Dhrubes  

Journal of Electronic Materials, Vol. 43, Iss. 4, 2014-04 ,pp. : 1263-1270

Springer Publishing Company

Access to resources Recommend Favorite

Comparison of GaAs grown on standard Si (511) and compliant SOI (511)

By Seaford M.   Tomich D.   Eyink K.   Grazulis L.   Mahalingham K.   Yang Z.   Wang W.  

Journal of Electronic Materials, Vol. 29, Iss. 7, 2000-07 ,pp. : 906-908

Springer Publishing Company

Access to resources Recommend Favorite