Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

By Yablonskii G.   Gurskii A.   Lutsenko E.   Marko I.   Schineller B.   Guttzeit A.   Schön O.   Heuken M.   Heime K.   Beccard R.   Schmitz D.   Juergensen H.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 222-228

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Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor phase epitaxy using alternative sources

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Journal of Electronic Materials, Vol. 27, Iss. 2, 1998-02 ,pp. : 81-84

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Structural properties of ZnS y Se 1−y ZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy

By Zhang X.   Kalisetty S.   Robinson J.   Zhao G.   Parent D.   Ayers J.   Jain F.  

Journal of Electronic Materials, Vol. 26, Iss. 6, 1997-06 ,pp. : 697-704

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Impurity Band in the Interfacial Region of GaN Films Grown by Hydride Vapor Phase Epitaxy

By Hsu J.W.P.   Lang D.V.   Richter S.   Kleiman R.N.   Sergent A.M.   Look D.C.   Molnar R.J.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 115-122

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GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

By Nikolaev A.   Rendakova S.   Nikitina I.   Vassilevski K.   Dmitriev V.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 288-291

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