Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties

Author： Ressel P.   Hao P.   Park M.   Yang Z.   Wang L.   Österle W.   Kurpas P.   Richter E.   Kuphal E.   Hartnagel H.  

Publisher： Springer Publishing Company

ISSN： 1543-186X

Source： Journal of Electronic Materials, Vol.29, Iss.7, 2000-07, pp. : 964-972

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